Analytical modeling of metal oxide semiconductor inversion-layer capacitance

被引：3
|
作者：
Khairurrijal
Miyazaki, S
Takagi, S
Hirose, M
机构：
[1] Japan Sci & Technol Corp, CREST Program, Kawaguchi 3320012, Japan
[2] Hiroshima Univ, Dept Elect Engn, Higashihiroshima 7398527, Japan
[3] Toshiba Co Ltd, R&D Ctr, Adv Semicond Device Res Labs, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 1AB期
关键词：
MOSFET; inversion layer; electron confinement; quantum mechanical inversion-layer capacitance;
D O I：
10.1143/JJAP.38.L30
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electron wavefunctions confined in a logarithmic potential well formed in the inversion layer of a metal oxide semiconductor field-effect transistor (MOSFET) are given on the basis of generalized Airy functions. The charge centroid of electrons in the inversion layer has been calculated to derive the quantum mechanical inversion-layer capacitance by taking into account higher subband states. It is shown that the present analytical model can quantitatively explain the experimentally observed inversion-layer capacitance.
引用
收藏
页码：L30 / L32
页数：3
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