Enhancing CMOS Using Nanoelectronic Devices: A Perspective on Hybrid Integrated Systems

被引：4
|
作者：
Ricketts, David S. [1 ]
Bain, James A. [1 ]
Luo, Yi [1 ]
Blanton, Ronald DeShawn [1 ]
Mai, Kenneth [1 ]
Fedder, Gary K. [1 ]
机构：
[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
来源：
PROCEEDINGS OF THE IEEE | 2010年 / 98卷 / 12期
基金：
美国安德鲁·梅隆基金会; 美国国家科学基金会;
关键词：
Complementary metal-oxide-semiconductor (CMOS); memory; nanoimprint; nanotechnology; parallel fabrication; reconfigurable circuits; scanning probe microscopy; self-evolving systems; ROOM-TEMPERATURE; IMPRINT LITHOGRAPHY; NANOWIRE ARRAYS; TOGGLE MRAM; ELECTRON; SRAM; MAGNETORESISTANCE; JUNCTIONS; MILLIPEDE; PATTERNS;
D O I：
10.1109/JPROC.2010.2064270
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present a vision for the cointegration of deeply scaled complementary metal-oxide-semiconductor (CMOS) and emerging nanoelectronic devices into CMOS-hybrid systems. These hybrid systems will create new functionality, modality and add value to existing CMOS integrated circuits. We describe several new nanoelectronic devices which may enable new dimensions to traditional CMOS circuits and systems that build on CMOS compatible, parallel nanoscale fabrication methods. In addition, we show that the integration of multimodal sensors and nonvolatile memory enables a platform of self-evolving hardware that is able to adapt to fabrication variation, environmental changes, and applications changes on-the-fly.
引用
收藏
页码：2061 / 2075
页数：15
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