A novel approach for determining the AlGaAs/GaAs HBT small-signal equivalent circuit elements

被引：0

作者：

Zhou, TS ^{[1
]}

Ooi, BL ^{[1
]}

Kooi, PS ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Commun & Microwave Div, Singapore 119260, Singapore

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2001年 / 28卷 / 04期

关键词：

AlGaAs/GaAs; HBT; small-signal model;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An efficient method for extracting the small-signal model parameters of an HBT transistor is proposed. The strong correlation between the extrinsic and intrinsic HBT model parameters, which can be employed to drastically reduce the search space, is exploited. For the first time in HBT modeling, an explicit equation of the total extrinsic elements, which results in a reduction of the number of unknowns for optimization, is derived. This novel approach can yield a good fit between measured and simulated S-parameters. (C) 2001 John Wiley & Sons, Inc.

引用

页码：278 / 282

页数：5

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