A SELF-CONSISTENT CALCULATION OF THE SMALL-SIGNAL PARAMETERS FOR ALGAAS GAAS AND ALGAAS INGAAS GAAS HEMTS

被引：10
|
作者：
LIU, KW
ANWAR, AFM
机构：
[1] Department of Electrical and Systems Engineering, The University of Connecticut, Storrs
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 01期
关键词：
D O I：
10.1016/0038-1101(94)90103-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detail modeling of the d.c. small-signal parameters for AlGaAs/GaAs HEMTs and AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs (PHEMTs) is presented. The theoretical calculations are based on self-consistent solution of Schrodinger and Poisson's equations. Study shows that pseudomorphic HEMTs have a higher transconductance and unity current gain cut-off frequency than those of normal AlGaAs/GaAs HEMTs. In this paper, the calculated transconductances are compared with experimental data and the results show excellent agreement for both devices.
引用
收藏
页码：51 / 54
页数：4
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