A SELF-CONSISTENT CALCULATION OF THE SMALL-SIGNAL PARAMETERS FOR ALGAAS GAAS AND ALGAAS INGAAS GAAS HEMTS

被引：10
|
作者：
LIU, KW
ANWAR, AFM
机构：
[1] Department of Electrical and Systems Engineering, The University of Connecticut, Storrs
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 01期
关键词：
D O I：
10.1016/0038-1101(94)90103-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detail modeling of the d.c. small-signal parameters for AlGaAs/GaAs HEMTs and AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs (PHEMTs) is presented. The theoretical calculations are based on self-consistent solution of Schrodinger and Poisson's equations. Study shows that pseudomorphic HEMTs have a higher transconductance and unity current gain cut-off frequency than those of normal AlGaAs/GaAs HEMTs. In this paper, the calculated transconductances are compared with experimental data and the results show excellent agreement for both devices.
引用
收藏
页码：51 / 54
页数：4
相关论文
共 50 条
  • [31] TRANSIENT SIMULATION OF ALGAAS/GAAS/ALGAAS AND ALGAAS/INGAAS/ALGAAS HOT-ELECTRON TRANSISTORS
    KUZUHARA, M
    KIM, K
    HESS, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) : 118 - 123
  • [32] Novel approach for determining the AlGaAs/GaAs HBT small-signal equivalent circuit elements
    Zhou, T.S., 2001, John Wiley & Sons Inc, New York, NY, United States (28)
  • [33] Small-signal characteristics of n+-Ge gate AlGaAs/GaAs MISFET's
    Fujita, Shuichi
    Hirano, Makoto
    Mizutani, Takashi
    Electron device letters, 1988, 9 (10): : 518 - 520
  • [34] MBE-grown GaAs/AlGaAs and strained InGaAs/AlGaAs/GaAs quantum cascade lasers
    Strasser, G
    Gianordoli, S
    Schrenk, W
    Gornik, E
    Mücklich, A
    Helm, M
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 197 - 201
  • [35] IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HEMTS
    CANALI, C
    PACCAGNELLA, A
    PISONI, P
    TEDESCO, C
    TELAROLI, P
    ZANONI, E
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (11) : 2571 - 2573
  • [36] Radiation damage in AlGaAs/GaAs pseudomorphic HEMTs
    Ohyama, H
    Simoen, E
    Kuroda, S
    Claeys, C
    Takami, Y
    Hakata, T
    Hayama, K
    Tajiri, T
    Nakabayashi, M
    Kobayashi, K
    Yoneoka, M
    Sunage, H
    FIFTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1999, : 295 - 298
  • [37] ALGAAS/INGAAS/GAAS OPTOELECTRONIC STRUCTURES ON (111)B GAAS
    CHATENOUD, F
    JANZ, S
    NORMANDIN, R
    DAI, H
    MCCAFFEY, JP
    CANADIAN JOURNAL OF PHYSICS, 1992, 70 (10-11) : 1082 - 1085
  • [38] Oval defects in the MBE grown AlGaAs/InGaAs/GaAs and InGaAs GaAs structures
    Klima, K
    Kaniewska, M
    Reginski, K
    Kaniewski, J
    CRYSTAL RESEARCH AND TECHNOLOGY, 1999, 34 (5-6) : 683 - 687
  • [39] AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
    Watanabe, T
    Yamamoto, T
    Vaccaro, PO
    Ohnishi, H
    Fujita, K
    MICROELECTRONICS JOURNAL, 1996, 27 (4-5) : 411 - 421
  • [40] Fabrication and characteristics of extremely low-noise AlGaAs/InGaAs/GaAs pseudomorphic HEMTs
    Yoon, HS
    Lee, JH
    Park, BS
    Yun, CE
    Park, CS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 33 (06) : 741 - 744
12345