Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films

被引：6

作者：

Chang, P. C. ^{[1
]}

Yu, C. L. ^{[2
]}

Jahn, Y. W. ^{[2
]}

Chang, S. J. ^{[2
]}

Lee, K. H. ^{[3
]}

机构：

[1] Kun Shan Univ, Dept Electroopt Engn, Yong Kang 71003, Peoples R China

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Synchrotron Radiat Res Ctr, Sci Res Div, Nano Sci Grp, Hsinchu 30076, Taiwan

来源：

APPLICATIONS OF ENGINEERING MATERIALS, PTS 1-4 | 2011年 / 287-290卷

关键词：

InGaN; metalorganic chemical vapor deposition (MOCVD); LIGHT-EMITTING-DIODES; MOCVD; GAN; PRESSURE;

D O I：

10.4028/www.scientific.net/AMR.287-290.1456

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InxGa1-xN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures between 740 degrees C to 830 degrees C. The thickness of InGaN film is 50nm for all samples. The incorporation of indium is found to increase with decreasing grown temperature. The optical properties and film quality of the samples have been investigated by photoluminescence (PL) system and X-ray diffraction (XRD). The Full Width at Half Maximum (FWHM) of PL and XRD decreases with increasing the grown temperature. We also found that the peak emission of PL shifts with changing the grown temperature. The effect of temperature on the film properties was determined. This understanding will lead to better quality control of the optoelectronic devices.

引用

页码：1456 / +

页数：2

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