EPITAXIAL GROWTH OF INDIUM ANTIMONIDE FILMS AS STUDIED IN SITU BY ELECTRON DIFFRACTION

被引:15
|
作者
KHAN, IH
机构
关键词
D O I
10.1016/0039-6028(68)90180-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:306 / &
相关论文
共 50 条
  • [1] ELECTRICAL PROPERTIES OF EPITAXIAL FILMS OF INDIUM ARSENIDE AND ANTIMONIDE
    VLASOV, VA
    SEMILETO.SA
    SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1969, 13 (04): : 580 - +
  • [3] Molecular beam epitaxial growth of indium antimonide and its characterization
    Pharn, H. T.
    Yoon, S. F.
    Boning, D.
    Wicaksono, S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (01): : 11 - 16
  • [4] GROWTH OF GALLIUM ANTIMONIDE EPITAXIAL LAYERS ON INDIUM ARSENIDE SUBSTRATES
    PRAMATAROVA, LD
    TRETJAKOV, DN
    CRYSTAL RESEARCH AND TECHNOLOGY, 1981, 16 (09) : 995 - 1000
  • [5] Distribution of Group VI Elements in Indium Antimonide Epitaxial Films.
    Burlaku, G.G.
    Karamov, A.G.
    Neorganiceskie materialy, 1980, 16 (06): : 964 - 967
  • [6] INDIUM ANTIMONIDE FILMS
    JUHASZ, C
    VACUUM, 1968, 18 (08) : 471 - &
  • [7] ELECTRON IRRADIATION OF INDIUM ANTIMONIDE
    AUKERMAN, LW
    PHYSICAL REVIEW, 1959, 115 (05): : 1125 - 1132
  • [8] ORIENTED GROWTH OF SEMICONDUCTORS .4. VACUUM DEPOSITION OF EPITAXIAL INDIUM ANTIMONIDE
    HOLLOWAY, H
    RICHARDS, JL
    BOBB, LC
    PERRY, J
    ZIMMERMAN, E
    JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4694 - &
  • [9] Optical Characterization of Electron Beam Evaporated Indium Antimonide Thin Films
    Rahul, A. K.
    Verma, R. S. N.
    Tripathi
    Vishwakarma, S. R.
    AFRICAN REVIEW OF PHYSICS, 2012, 7 : 383 - 388
  • [10] Structural Characterization of Electron Beam Evaporated Indium Antimonide Thin Films
    Rahul
    Vishwakarma, S. R.
    Tripathi, Ravishankar Nath
    Verma, Aneet Kumar
    AFRICAN REVIEW OF PHYSICS, 2011, 6