Process integration of Pr-based high-k gate dielectrics

被引：4

作者：

Mane, AU ^{[1
]}

Wenger, C ^{[1
]}

Lupina, G ^{[1
]}

Schroeder, T ^{[1
]}

Lippert, G ^{[1
]}

Sorge, R ^{[1
]}

Zaumseil, P ^{[1
]}

Weidner, G ^{[1
]}

Dabrowski, J ^{[1
]}

Müssig, HJ ^{[1
]}

机构：

[1] IHP Microelect, D-15236 Frankfurt, Germany

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 82卷 / 02期

关键词：

Pr2O3; Pr-silicate; wet etching; RIE; MBE; CMOS;

D O I：

10.1016/j.mee.2005.07.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the process integration of the Pr-based high-k oxides Pr2O3, PrTixOy and PrxSiyOz for CMOS devices. MOS structures were grown in form of p(+) poly-Si/Pr-based dielectric/Si(100) by MBE. RIE with CF4/O-2 plasma was used to selectively remove the poly-Si layer. It was found that the Pr-based oxides layers can be dissolved with high selectivity in diluted H2SO4 solutions. Details of the etch kinetics of Pr-based oxides and poly-Si were studied. Electrical characteristics of MOS stacks with integrated PrxSiyOz are presented. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：148 / 153

页数：6

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