Significant improvement in Ba1-xKxBiO3 grain boundary junctions on MgO bicrystal substrates by minimal BaBiO3 sputtering

被引：1
|
作者：
Wada, Y [1 ]
Takami, T [1 ]
Kuroda, K [1 ]
Ozeki, T [1 ]
机构：
[1] Mitsubishi Elect Corp, Adv Tech R&D Ctr, Amagasaki, Hyogo 6618661, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 6B期
关键词：
high T-c superconductor; Ba1-xKxBiO3; BKBO; BaBiO3; BBO; bicrystal substrate; Josephson junction;
D O I：
10.1143/JJAP.37.L725
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High quality Ba1-xKxBiO3 (BKBO) artificial grain boundary junctions were fabricated on MgO (100) bicrystal substrates. We found that extremely-short-time sputtering of BaBiO3 (BBO) onto MgO substrate prior to BKBO deposition results in a marked improvement in the quality of the BKBO film. Utilizing this technique, a junction with J(c) = 6 kA/cm(2) and Delta V-g approximate to 1 mV at 4.2 K was fabricated. In addition, a junction with a high critical current density of J(c) = 78 kA/cm(2) was obtained.
引用
收藏
页码：L725 / L727
页数：3
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