Significant improvement in Ba1-xKxBiO3 grain boundary junctions on MgO bicrystal substrates by minimal BaBiO3 sputtering

被引：1

作者：

Wada, Y ^{[1
]}

Takami, T ^{[1
]}

Kuroda, K ^{[1
]}

Ozeki, T ^{[1
]}

机构：

[1] Mitsubishi Elect Corp, Adv Tech R&D Ctr, Amagasaki, Hyogo 6618661, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 6B期

关键词：

high T-c superconductor; Ba1-xKxBiO3; BKBO; BaBiO3; BBO; bicrystal substrate; Josephson junction;

D O I：

10.1143/JJAP.37.L725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality Ba1-xKxBiO3 (BKBO) artificial grain boundary junctions were fabricated on MgO (100) bicrystal substrates. We found that extremely-short-time sputtering of BaBiO3 (BBO) onto MgO substrate prior to BKBO deposition results in a marked improvement in the quality of the BKBO film. Utilizing this technique, a junction with J(c) = 6 kA/cm(2) and Delta V-g approximate to 1 mV at 4.2 K was fabricated. In addition, a junction with a high critical current density of J(c) = 78 kA/cm(2) was obtained.

引用

页码：L725 / L727

页数：3

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