Nonlinearity and recovery time of 1.55μm intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells

被引：69
|
作者：
Akiyama, T [1 ]
Georgiev, N [1 ]
Mozume, T [1 ]
Yoshida, H [1 ]
Gopal, AV [1 ]
Wada, O [1 ]
机构：
[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 3002635, Japan
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 02期
关键词：
D O I：
10.1049/el:20010087
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Values for the nonlinearity and recovery time of 1.55 mum intersubband absorption have been experimentally obtained for the first time by using InGaAs/AlAs/AlAsSb coupled quantum wells. The third-order susceptibility (chi ((3))) has been evaluated to be 5.8x10-(17)m(2)/V-2. An ultrafast recovery time (tau) of similar to 685fs has been obtained while keeping the figure of merit (chi ((3))/alpha tau) as large as those of interband transitions.
引用
收藏
页码：129 / 130
页数：2
相关论文
共 50 条
  • [41] Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy
    Kasai, J
    Mozume, T
    Yoshida, H
    Simoyama, T
    Gopal, AV
    Ishikawa, H
    E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS, 2004, 1 (02): : 368 - 371
  • [42] Strain compensation for InGaAs-AlAs-AlAsSb coupled double quantum wells by controlling the barrier layer composition
    Nagase, Masanori
    Mozume, Teruo
    Simoyama, Takasi
    Hasama, Toshifumi
    Ishikawa, Hiroshi
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 240 - 243
  • [43] InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550 nm
    Gozu, Shin-ichiro
    Mozume, Teruo
    Kuwatsuka, Haruhiko
    Ishikawa, Hiroshi
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 134 - 136
  • [44] INFRARED INTERSUBBAND ABSORPTION IN GAAS ALAS MULTIPLE QUANTUM WELLS
    COVINGTON, BC
    LEE, CC
    HU, BH
    TAYLOR, HF
    STREIT, DC
    APPLIED PHYSICS LETTERS, 1989, 54 (21) : 2145 - 2147
  • [45] Ultrafast all-optical switching at 1.3 μm/1.55 μm using a novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions
    Yoshida, H
    Mozume, T
    Neogi, A
    Wada, O
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 247 - 249
  • [46] Ultrafast all-optical switching at 1.3μm/1.55μm using novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions
    Yoshida, H
    Mozume, T
    Neogi, A
    Wada, O
    ELECTRONICS LETTERS, 1999, 35 (13) : 1103 - 1105
  • [47] 1.45 μm intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy
    Mozume, T
    Yoshida, H
    Neogi, A
    Kudo, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B): : 1286 - 1289
  • [48] 1.45 μm intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy
    Mozume, Teruo
    Yoshida, Haruhiko
    Neogi, Arup
    Kudo, Makoto
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (2 B): : 1286 - 1289
  • [49] Near-infrared intersubband transitions in InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy
    Mozume, T
    Yoshida, H
    Neogi, A
    Georgiev, N
    Asakawa, K
    Kudo, M
    COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 131 - 136
  • [50] Intersubband absorption dynamics in coupled quantum wells
    Müller, T
    Bratschitsch, R
    Strasser, G
    Unterrainer, K
    APPLIED PHYSICS LETTERS, 2001, 79 (17) : 2755 - 2757
12345