Nonlinearity and recovery time of 1.55μm intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells

被引：69

作者：

Akiyama, T ^{[1
]}

Georgiev, N ^{[1
]}

Mozume, T ^{[1
]}

Yoshida, H ^{[1
]}

Gopal, AV ^{[1
]}

Wada, O ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 3002635, Japan

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 02期

关键词：

D O I：

10.1049/el:20010087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Values for the nonlinearity and recovery time of 1.55 mum intersubband absorption have been experimentally obtained for the first time by using InGaAs/AlAs/AlAsSb coupled quantum wells. The third-order susceptibility (chi ((3))) has been evaluated to be 5.8x10-(17)m(2)/V-2. An ultrafast recovery time (tau) of similar to 685fs has been obtained while keeping the figure of merit (chi ((3))/alpha tau) as large as those of interband transitions.

引用

页码：129 / 130

页数：2

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