Nonlinearity and recovery time of 1.55μm intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells

被引：69
|
作者：
Akiyama, T [1 ]
Georgiev, N [1 ]
Mozume, T [1 ]
Yoshida, H [1 ]
Gopal, AV [1 ]
Wada, O [1 ]
机构：
[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 3002635, Japan
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 02期
关键词：
D O I：
10.1049/el:20010087
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Values for the nonlinearity and recovery time of 1.55 mum intersubband absorption have been experimentally obtained for the first time by using InGaAs/AlAs/AlAsSb coupled quantum wells. The third-order susceptibility (chi ((3))) has been evaluated to be 5.8x10-(17)m(2)/V-2. An ultrafast recovery time (tau) of similar to 685fs has been obtained while keeping the figure of merit (chi ((3))/alpha tau) as large as those of interband transitions.
引用
收藏
页码：129 / 130
页数：2
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