Photoluminescence Characterization of Hydrogenated Nanocrystalline/Amorphous Silicon

被引：1

作者：

Fields, J. D. ^{[1
]}

Taylor, P. C. ^{[2
]}

Radziszewski, J. G. ^{[2
]}

Baker, D. A. ^{[2
]}

Yue, G.

Yan, B.

机构：

[1] Colorado Sch Mines, Dept Mat Sci, Golden, CO 80401 USA

[2] Colorado Sch Mines, Dept Phys Sci, Golden, CO 80401 USA

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153 | 2009年 / 1153卷

关键词：

TEMPERATURE;

D O I：

10.1557/PROC-1153-A02-01

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photoluminescence in a nc-Si/a-Si:H mixture has been investigated at varying excitation intensities, and temperatures We have also observed changes in the luminescence spectra, which are induced by sequential annealing at temperatures below the a-Si: H crystallization temperature (similar to 600 degrees C). Two predominant luminescence peaks are observed at similar to 0.95 eV and similar to 1.30 eV, which are attributed to band tail-to-band tail transitions near the nc-Si grain boundaries and in the a-Si: H bulk, respectively. The 0.95 eV band saturates approaching 500 mW/cm(2) excitation intensity. Annealing the nc-Si/a-Si: H mixture brings out a new low energy peak, centered at similar to 0.70 eV, and which we believe to be due to oxygen defects.

引用

页数：6

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