A 30μW, 3.3dB NF CMOS LNA for Wearable WSN Applications

被引：0

作者：

Kargaran, Ehsan ^{[1
]}

Manstretta, Danilo ^{[1
]}

Castello, Rinaldo ^{[1
]}

机构：

[1] Univ Pavia, Microelect Grp, I-27100 Pavia, Italy

来源：

2017 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2017年

关键词：

ultra low power; low noise figure; current reuse; gmboosting; wearable; WSN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To meet the requirements of wearable wireless sensor networks (W-WSN), the power dissipation of the RF transceiver has to be drastically reduced. This paper presents an ultra-low power LNA with RF performance exceeding the requirement of the intended application. By reusing the current several times and employing passive gm boosting, the LNA input impedance is reduced by a factor of 24 compared to a single transistor using the same current. The resulting power consumption is only 30 mu W from a 0.8V supply. Simulation results in 40nm TSMC CMOS technology show NF of 3.3dB and gain of 14.2dB at 2.4GHz. Using a widely accepted FOM for LNAs, the proposed circuit is two times better than the best previously published one.

引用

页数：4

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