3.88 dB NF 60 GHz CMOS UWB LNA with small group-delay-variation

被引:11
|
作者
Lee, J. H. [1 ]
Lin, Y. S. [1 ]
机构
[1] Natl Chi Nan Univ, Dept Elect Engn, Puli, Taiwan
关键词
D O I
10.1049/el.2012.4455
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low power and low noise figure (NF) 60 GHz low-noise amplifier (LNA) with excellent phase linearity using standard 90 nm CMOS technology is reported. The LNA comprises a common-source (CS) stage followed by a cascode stage and a CS stage. The LNA consumes 14.1 mW, achieving S-11 better than - 10 dB for the frequencies 55.1-59.5 GHz, S-22 better than - 10 dB for the frequencies 55.1-59.4 GHz, and group delay variation smaller than +/- 13.25 ps for the frequencies 50.4-63 GHz. Additionally, high and flat S-21 of 9.9 +/- 1.5 dB is achieved for the frequencies 50.4-62.9 GHz, which means the corresponding 3 dB bandwidth is 12.5 GHz. Furthermore, the LNA achieves a minimum NF of 3.88 dB at 55.5 GHz and an NF of 4.73 +/- 0.85 dB for the frequencies 50-63.5 GHz, one of the best NF results ever reported for a 60 GHz CMOS LNA.
引用
收藏
页码:472 / 473
页数:2
相关论文
共 50 条
  • [1] A 2.5-dB NF 3.1-10.6-GHz CMOS UWB LNA with small group-delay-variation
    Lee, Jen-How
    Chen, Chi-Chen
    Yang, Hong-Yu
    Lin, Yo-Sheng
    2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2, 2008, : 451 - 454
  • [2] 2.5 dB NF 3.1-10.6 GHz CMOS UWB LNA with small group-delay variation
    Yang, H. -Y.
    Lin, Y. -S.
    Chen, C. -C.
    ELECTRONICS LETTERS, 2008, 44 (08) : 528 - 530
  • [3] A 4.9-dB NF 53.5-to 62-GHz MICROMACHINED CMOS WIDEBAND LNA WITH SMALL GROUP-DELAY-VARIATION
    Chen, Chi-Chen
    Lin, Yo-Sheng
    Huang, Pen-Li
    Lu, Shey-Shi
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2010, 52 (11) : 2427 - 2432
  • [4] A 4.9-dB NF 53.5-62-GHz Micro-machined CMOS Wideband LNA with Small Group-Delay-Variation
    Chen, Chi-Chen
    Lin, Yo-Sheng
    Huang, Pen-Li
    Chang, Jin-Fa
    Lu, Shey-Shi
    2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT), 2010, : 489 - 492
  • [5] ANALYSIS AND DESIGN OF A COMPACT ULTRAWIDEBAND LNA WITH 2.3 ± 0.1 dB NF AND ±14.6 ps GROUP-DELAY-VARIATION IN 0.18-μm CMOS
    Lin, Yo-Sheng
    Wang, Chien-Chin
    Lee, Guan-Lin
    Wang, Chiu-Hsuan
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2014, 56 (09) : 2047 - 2053
  • [6] 60 GHz Variable Gain LNA with Small NF Variation
    So, Cheol
    Hong, Songcheol
    2017 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2017, : 171 - 173
  • [7] Fully Balanced 60 GHz LNA with 37 % Bandwidth, 3.8 dB NF, 10 dB Gain and Constant Group Delay over 6 GHz Bandwidth
    Janssen, Erwin
    Mahmoudi, Reza
    van der Heijden, Edwin
    Sakian, Pooyan
    de Graauw, Anton
    Pijper, Ralf
    van Roermund, Arthur
    2010 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, 2010, : 124 - +
  • [8] 0.18 μm 21-27 GHz CMOS UWB LNA with 9.3 ± 1.3 dB gain and 103.9 ± 8.1 ps group delay
    Yang, H. -Y.
    Lin, Y. -S.
    Chen, C. -C.
    ELECTRONICS LETTERS, 2008, 44 (17) : 1014 - 1015
  • [9] A 60-GHz LNA WITH 18.6-dB GAIN AND 5.7-dB NF IN 90-nm CMOS
    Kang, Kai
    Brinkhoff, James
    Lin, Fujiang
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2010, 52 (09) : 2056 - 2059
  • [10] A 64 GHz LNA with 15.5 dB gain and 6.5 dB NF in 90 nm CMOS
    Pellerano, Stefano
    Palaskas, Yorgos
    Soumyanath, Krishnamurthy
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (07) : 1542 - 1552