3.88 dB NF 60 GHz CMOS UWB LNA with small group-delay-variation

被引:11
|
作者
Lee, J. H. [1 ]
Lin, Y. S. [1 ]
机构
[1] Natl Chi Nan Univ, Dept Elect Engn, Puli, Taiwan
关键词
D O I
10.1049/el.2012.4455
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low power and low noise figure (NF) 60 GHz low-noise amplifier (LNA) with excellent phase linearity using standard 90 nm CMOS technology is reported. The LNA comprises a common-source (CS) stage followed by a cascode stage and a CS stage. The LNA consumes 14.1 mW, achieving S-11 better than - 10 dB for the frequencies 55.1-59.5 GHz, S-22 better than - 10 dB for the frequencies 55.1-59.4 GHz, and group delay variation smaller than +/- 13.25 ps for the frequencies 50.4-63 GHz. Additionally, high and flat S-21 of 9.9 +/- 1.5 dB is achieved for the frequencies 50.4-62.9 GHz, which means the corresponding 3 dB bandwidth is 12.5 GHz. Furthermore, the LNA achieves a minimum NF of 3.88 dB at 55.5 GHz and an NF of 4.73 +/- 0.85 dB for the frequencies 50-63.5 GHz, one of the best NF results ever reported for a 60 GHz CMOS LNA.
引用
收藏
页码:472 / 473
页数:2
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