Structure of SiC layers grown by LPE in microgravity and on-ground conditions

被引：0

作者：

Pécz, B

Yakimova, R

Syväjärvi, M

Lockowandt, C

Radnóczi, G

Janzén, E

机构：

[1] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[3] Swedish Space Corp, S-17104 Solna, Sweden

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS | 1999年 / 164期

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High quality, hexagonal SiC layers have been grown in microgravity conditions and on-ground as well. The surface of the layers is always stepped. The dislocation density of the layers is increased closer to the surface. Scandium carbide precipitates, nanopipes and cavities were found in the SiC layers grown on-ground, but none of them were traced in the layers grown under microgravity conditions.

引用

页码：243 / 246

页数：4

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