Structure of SiC layers grown by LPE in microgravity and on-ground conditions

被引：0
|
作者：
Pécz, B
Yakimova, R
Syväjärvi, M
Lockowandt, C
Radnóczi, G
Janzén, E
机构：
[1] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[3] Swedish Space Corp, S-17104 Solna, Sweden
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS | 1999年 / 164期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
High quality, hexagonal SiC layers have been grown in microgravity conditions and on-ground as well. The surface of the layers is always stepped. The dislocation density of the layers is increased closer to the surface. Scandium carbide precipitates, nanopipes and cavities were found in the SiC layers grown on-ground, but none of them were traced in the layers grown under microgravity conditions.
引用
收藏
页码：243 / 246
页数：4
相关论文
共 50 条
  • [21] PHOTOREFLECTANCE OF INTRINSIC GAAS EPITAXIAL LAYERS GROWN BY LPE WITH SUPERCOOLING
    ALEJOARMENTA, C
    VAZQUEZLOPEZ, C
    TORRESDELGADO, G
    MENDOZAALVAREZ, JG
    ALVARADOGIL, JJ
    REVISTA MEXICANA DE FISICA, 1993, 39 (06) : 924 - 931
  • [22] The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy
    Ruterana, P
    Vermaut, P
    Potin, V
    Nouet, G
    Botchkarev, A
    Salvador, A
    Morkoc, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 72 - 75
  • [23] Free surface reconstruction of opaque liquids in microgravity, Part 1: Design and on-ground testing
    Romero-Calvo, A.
    Garcia-Salcedo, A. J.
    Garrone, F.
    Rivoalen, I
    Cano-Gomez, G.
    Castro-Hernandez, E.
    Maggi, F.
    ACTA ASTRONAUTICA, 2021, 189 : 250 - 259
  • [24] INTERFACE ABRUPTNESS IN LPE GROWN (CDHG) TE LAYERS ON CDTE SUBSTRATES
    ASTLES, MG
    BLACKMORE, G
    DOSSER, OD
    HILL, H
    LYSTER, M
    BOOKER, GR
    HILL, M
    JOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) : 549 - 553
  • [25] LPE InP layers grown in the presence of rare-earth elements
    Procházková, O
    Zavadil, J
    Zdánsky, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 14 - 17
  • [26] Surface morphology of LPE SiGe layers grown on (100) Si substrates
    Sembian, AM
    Silier, I
    Davies, K
    Gutjahr, A
    Lyutovich, K
    Konuma, M
    Banhart, F
    THIN-FILM STRUCTURES FOR PHOTOVOLTAICS, 1998, 485 : 19 - 24
  • [27] INVESTIGATION OF ERBIUM DOPING OF INP AND (GA,IN)(AS,P) LAYERS GROWN BY LPE
    CHATTERJEE, AK
    HAIGH, J
    JOURNAL OF CRYSTAL GROWTH, 1990, 106 (04) : 537 - 542
  • [28] THE TRANSITION LAYERS IN ALGAAS/GAAS AND INGAASP/GAAS HETEROSTRUCTURES GROWN BY LPE
    BOLKHOVITYANOV, YB
    CRYSTAL RESEARCH AND TECHNOLOGY, 1989, 24 (05) : 491 - 502
  • [29] PHENOMENOLOGICAL STUDY OF MENISCUS LINES ON SURFACES OF GAAS LAYERS GROWN BY LPE
    SMALL, MB
    BLAKESLEE, AE
    SHIH, KK
    POTEMSKI, RM
    JOURNAL OF CRYSTAL GROWTH, 1975, 30 (02) : 257 - 266
  • [30] On the Microstructure and the Polytype Transformation in 3C-SiC Crystals Grown by LPE on (001) Substrates at Different Growth Conditions
    Mantzari, Alkyoni
    Marinova, Maya
    Andreadou, Ariadne
    Mercier, Frederic
    Galben-Sandulache, Irina G.
    Frangis, Nikolaos
    Chaussende, Didier
    Polychroniadis, Efstathios K.
    2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, 1292 : 79 - +
12345