Development of a 100keV electron beam nano lithography system

被引：1
|
作者：
Mimura, R
Kinokuni, M
Sawaragi, H
Aihara, R
机构：
[1] EIKO Engineering Co., Ltd., Ibaraki 311-12
来源：
MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(95)00198-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wide range energy (25, 50, 100keV) electron beam lithography system with ZrO/W Schottky electron source and UHV chamber has been developed. The electron probe stability of 2.5%/hour is measured, and a beam diameter of 3nm is confirmed at 100keV beam energy. The ultimate pressure of bakeable work chamber is confirmed to reach 4x10(-10)Torr. With the UHV chamber and a gas jet nozzle, this system allows to perform in situ electron beam nanolithography by combining with UHV multichamber systems.
引用
收藏
页码：73 / 76
页数：4
相关论文
共 50 条
  • [1] Beamline optimization for 100keV diagnostic neutral beam (DNB) injector for ITER
    Bandyopadhyay, M.
    Singh, M. J.
    Rotti, C.
    Chakraborty, A.
    Hemsworth, R.
    Schunke, B.
    2009 23RD IEEE/NPSS SYMPOSIUM ON FUSION ENGINEERING, 2009, : 150 - +
  • [2] High resolution x-ray mask fabrication by a 100 keV electron-beam lithography system
    Wang, L
    Desta, YM
    Fettig, RK
    Goettert, J
    Hein, H
    Jakobs, P
    Schulz, J
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2004, 14 (05) : 722 - 726
  • [3] 3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography
    Vila-Comamala, Joan
    Gorelick, Sergey
    Guzenko, Vitaliy A.
    David, Christian
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (06):
  • [4] Dense high aspect ratio hydrogen silsesquioxane nanostructures by 100 keV electron beam lithography
    Vila-Comamala, Joan
    Gorelick, Sergey
    Guzenko, Vitaliy A.
    Farm, Elina
    Ritala, Mikko
    David, Christian
    NANOTECHNOLOGY, 2010, 21 (28)
  • [5] 100 KEV ELECTRON-BEAM LITHOGRAPHY PROCESS FOR HIGH-ASPECT-RATIO SUBMICRON STRUCTURES
    BROSSARDT, R
    GOTZ, F
    RAPP, B
    MICROELECTRONIC ENGINEERING, 1995, 27 (1-4) : 139 - 142
  • [6] Precise measurement of the effective backscatter coefficient for 100-keV electron-beam lithography on Si
    Watson, GP
    Berger, SD
    Liddle, JA
    Fetter, LA
    Farrow, RC
    Tarascon, RG
    Mkrtchyan, M
    Novembre, AE
    Blakey, MI
    Bolan, KJ
    Poli, L
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2535 - 2538
  • [7] Design and implementation of a real-time hierarchical parallel postprocessor for 100 keV electron beam lithography
    Muray, LP
    Anderson, EH
    Boegli, V
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06): : 2204 - 2208
  • [8] Design and implementation of a real-time hierarchical parallel postprocessor for 100 keV electron beam lithography
    Muray, Lawrence P.
    Anderson, Erik H.
    Boegli, Volker
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (06):
  • [9] Development of electron beam lithography technique for large area nano structural color
    Youn, Sung-Won
    Suzuki, Kenta
    Hiroshima, Hiroshi
    Toda, Shunichi
    Nagai, Satoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (03)
  • [10] Development of a 17×17 parallel electron beam lithography system
    Miyaguchi H.
    Muroyama M.
    Yoshida S.
    Ikegami N.
    Kojima A.
    Tanaka S.
    Esashi M.
    IEEJ Transactions on Sensors and Micromachines, 2016, 136 (09) : 413 - 419
12345