Dense high aspect ratio hydrogen silsesquioxane nanostructures by 100 keV electron beam lithography

被引:36
|
作者
Vila-Comamala, Joan [1 ]
Gorelick, Sergey [1 ]
Guzenko, Vitaliy A. [1 ]
Farm, Elina [2 ]
Ritala, Mikko [2 ]
David, Christian [1 ]
机构
[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
[2] Univ Helsinki, Dept Chem, FI-00014 Helsinki, Finland
关键词
FABRICATION;
D O I
10.1088/0957-4484/21/28/285305
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigated the fabrication of dense, high aspect ratio hydrogen silsesquioxane (HSQ) nanostructures by 100 keV electron beam lithography. The samples were developed using a high contrast developer and supercritically dried in carbon dioxide. Dense gratings with line widths down to 25 nm were patterned in 500 nm-thick resist layers and semi-dense gratings with line widths down to 10 nm (40 nm pitch) were patterned in 250 nm-thick resist layers. The dense HSQ nanostructures were used as molds for gold electrodeposition, and the semi-dense HSQ gratings were iridium-coated by atomic layer deposition. We used these methods to produce Fresnel zone plates with extreme aspect ratio for scanning transmission x-ray microscopy that showed excellent performance at 1.0 keV photon energy.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography
    van Delft, FCMJM
    Weterings, JP
    van Langen-Suurling, AK
    Romijn, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06): : 3419 - 3423
  • [2] 100 KEV ELECTRON-BEAM LITHOGRAPHY PROCESS FOR HIGH-ASPECT-RATIO SUBMICRON STRUCTURES
    BROSSARDT, R
    GOTZ, F
    RAPP, B
    MICROELECTRONIC ENGINEERING, 1995, 27 (1-4) : 139 - 142
  • [3] 3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography
    Vila-Comamala, Joan
    Gorelick, Sergey
    Guzenko, Vitaliy A.
    David, Christian
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (06):
  • [4] Sub-5 keV electron-beam lithography in hydrogen silsesquioxane resist
    Manfrinato, Vitor R.
    Cheong, Lin Lee
    Duan, Huigao
    Winston, Donald
    Smith, Henry I.
    Berggren, Karl K.
    MICROELECTRONIC ENGINEERING, 2011, 88 (10) : 3070 - 3074
  • [5] Adhesion of proton beam written high aspect ratio hydrogen silsesquioxane (HSQ) nanostructures on different metallic substrates
    Gorelick, S.
    Zhang, F.
    van Kan, J. A.
    Whitlow, H. J.
    Watt, F.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (19): : 3314 - 3318
  • [6] Fabrication of high aspect ratio submicron gratings on ∼100nm titanium membranes using electron beam lithography
    Tiwari, Pragya
    Mondal, Puspen
    Srivastava, A. K.
    Naik, P. A.
    61ST DAE-SOLID STATE PHYSICS SYMPOSIUM, 2017, 1832
  • [7] Low-energy electron-beam lithography of hydrogen silsesquioxane
    Yang, Haifang
    Jin, Aizi
    Luo, Qiang
    Gu, Changzhi
    Cui, Zheng
    Chen, Yifang
    MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) : 788 - 791
  • [8] Development of a 100keV electron beam nano lithography system
    Mimura, R
    Kinokuni, M
    Sawaragi, H
    Aihara, R
    MICROELECTRONIC ENGINEERING, 1996, 30 (1-4) : 73 - 76
  • [9] Fabrication of high aspect ratio subwavelength gratings based on X-ray lithography and electron beam lithography
    Luo, Chenchen
    Li, Yigui
    Susumu, Sugiyama
    OPTICS AND LASER TECHNOLOGY, 2012, 44 (06): : 1649 - 1653
  • [10] Nanofabrication of super-high-aspect-ratio structures in hydrogen silsesquioxane from direct-write e-beam lithography and hot development
    Ocola, L. E.
    Tirumala, V. R.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (06): : 2632 - 2635