Development of a 100keV electron beam nano lithography system

被引：1
|
作者：
Mimura, R
Kinokuni, M
Sawaragi, H
Aihara, R
机构：
[1] EIKO Engineering Co., Ltd., Ibaraki 311-12
来源：
MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(95)00198-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wide range energy (25, 50, 100keV) electron beam lithography system with ZrO/W Schottky electron source and UHV chamber has been developed. The electron probe stability of 2.5%/hour is measured, and a beam diameter of 3nm is confirmed at 100keV beam energy. The ultimate pressure of bakeable work chamber is confirmed to reach 4x10(-10)Torr. With the UHV chamber and a gas jet nozzle, this system allows to perform in situ electron beam nanolithography by combining with UHV multichamber systems.
引用
收藏
页码：73 / 76
页数：4
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