Hydrogen-doped In2O3 as high-mobility transparent conductive oxide

We have developed hydrogen (H)-doped In2O3 films on glass with high mobility and high near-infrared transparency by using sputtering process performed at room temperature, followed by post-annealing treatment at 200 degrees C. To incorporate H-donor into In2O3 matrix, H2O vapor has been introduced into a chamber during the deposition. In the post-annealing of the films, phase transition from amorphous to polycrytalline was confirmed to occur. The resulting In2O3 films containing 1.9-6.3 at. % H show quite large mobility as high as 98-130 cm(2)/(V s) at carrier density of (1.4-1.8) x 10(20) cm(-3). We attributed the high mobility in the film to suppression of grain boundary defects as well as multicharged and neutral impurities.