Ti-doped In2O3 transparent conductive thin films with high transmittance and low resistivity

被引：0
|
作者：
Song, Zhenyu [1 ]
Fu, Qiang [1 ]
Li, Lei [1 ]
Li, Li [1 ]
An, Yupeng [1 ]
Wang, Yiding [1 ]
机构：
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
来源：
OPTICA APPLICATA | 2010年 / 40卷 / 04期
基金：
高等学校博士学科点专项科研基金;
关键词：
sputtering; In2O3; transparent conductive oxide; thin films; PULSED-LASER DEPOSITION; OPTOELECTRICAL PROPERTIES; OPTICAL-PROPERTIES; ITO FILMS; GA FILMS; ZNO; OXIDE; SUBSTRATE; AL; TEMPERATURE;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Ti-doped In2O3 thin films have been prepared on glass substrate by radio frequency (RF) sputtering with different sputtering powers (90, 120, 150, and 180 W) at 330 degrees C. The influence of sputtering power on the structural, electrical and optical properties of the deposited thin films is investigated. The average transmittance of the thin films in the wavelength range of 500-1100 nm is over 90%. Low resistivity of 7.3 x 10(-4) Omega cm is also obtained based on our thin films, suggesting that Ti-doped In2O3 is a good candidate for transparent conductive thin film.
引用
收藏
页码：751 / 757
页数：7
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