Silicon carbide power field-effect transistors

被引：13
|
作者：
Zhao, JH [1 ]
机构：
[1] Rutgers State Univ, Silicon Carbide Power Device Res Ctr, Piscataway, NJ 08855 USA
来源：
MRS BULLETIN | 2005年 / 30卷 / 04期
关键词：
field-effect transistors; metal oxide semiconductor field-effect transistors; MOSFETs; power switching; silicon carbide; vertical-junction field-effect transistors; VJFETs;
D O I：
10.1557/mrs2005.76
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon carbide power field-effect transistors, including power vertical Junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.
引用
收藏
页码：293 / 298
页数：6
相关论文
共 50 条
  • [41] Influence of plasma treatment of the surface of silicon carbide on the characteristics of buried-gate junction field-effect transistors
    Ivanov, PA
    Konkov, OI
    Panteleev, VN
    Samsonova, TP
    SEMICONDUCTORS, 1997, 31 (11) : 1212 - 1215
  • [42] RADIATION RESPONSES OF MATCHED SILICON JUNCTION FIELD-EFFECT TRANSISTORS
    NOTTHOFF, JK
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 397 - &
  • [43] CURRENT PATH IN AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS
    MATSUMURA, M
    KUNO, SI
    UCHIDA, Y
    JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 519 - 522
  • [44] Electronic transport characteristics in silicon nanotube field-effect transistors
    Shan, Guangcun
    Wang, Yu
    Huang, Wei
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2011, 43 (09): : 1655 - 1658
  • [45] Electrical characteristics of asymmetrical silicon nanowire field-effect transistors
    Sato, Soshi
    Kakushima, Kuniyuki
    Ohmori, Kenji
    Natori, Kenji
    Yamada, Keisaku
    Iwai, Hiroshi
    APPLIED PHYSICS LETTERS, 2011, 99 (22)
  • [46] SILICON JUNCTION FIELD-EFFECT TRANSISTORS AT 4.2K
    NAWROCKI, W
    CRYOGENICS, 1988, 28 (06) : 394 - 397
  • [47] ELECTRICAL CHARACTERIZATION OF PLANAR SILICON NANOWIRE FIELD-EFFECT TRANSISTORS
    Rosaz, G.
    Salem, B.
    Pauc, N.
    Gentile, P.
    Potie, A.
    Solanki, A.
    Bassani, F.
    Baron, T.
    Cagnon, L.
    INTERNATIONAL JOURNAL OF NANOSCIENCE, 2012, 11 (04)
  • [48] Noise Spectroscopy of Traps in Silicon Nanowire Field-Effect Transistors
    Pud, S.
    Li, J.
    Petrychuk, M.
    Feste, S.
    Offenhaeusser, A.
    Mantl, S.
    Vitusevich, S.
    2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2011, : 242 - 245
  • [49] Spin-dependent capacitance of silicon field-effect transistors
    Brandt, MS
    Neuberger, RT
    Stutzmann, M
    APPLIED PHYSICS LETTERS, 2000, 76 (11) : 1467 - 1469
  • [50] ANNEALING KINETICS IN AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS
    BAE, BS
    LEE, CC
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1992, 65 (05): : 933 - 944
12345