Silicon carbide power field-effect transistors

被引：13

作者：

Zhao, JH ^{[1
]}

机构：

[1] Rutgers State Univ, Silicon Carbide Power Device Res Ctr, Piscataway, NJ 08855 USA

来源：

MRS BULLETIN | 2005年 / 30卷 / 04期

关键词：

field-effect transistors; metal oxide semiconductor field-effect transistors; MOSFETs; power switching; silicon carbide; vertical-junction field-effect transistors; VJFETs;

D O I：

10.1557/mrs2005.76

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide power field-effect transistors, including power vertical Junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.

引用

页码：293 / 298

页数：6

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