Silicon carbide power field-effect transistors

被引：13

作者：

Zhao, JH ^{[1
]}

机构：

[1] Rutgers State Univ, Silicon Carbide Power Device Res Ctr, Piscataway, NJ 08855 USA

来源：

MRS BULLETIN | 2005年 / 30卷 / 04期

关键词：

field-effect transistors; metal oxide semiconductor field-effect transistors; MOSFETs; power switching; silicon carbide; vertical-junction field-effect transistors; VJFETs;

D O I：

10.1557/mrs2005.76

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide power field-effect transistors, including power vertical Junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.

引用

页码：293 / 298

页数：6

共 50 条

[1] Silicon Carbide Power Field-Effect Transistors
Jian H. Zhao
MRS Bulletin, 2005, 30 : 293 - 298
[2] SILICON-CARBIDE MICROWAVE FIELD-EFFECT TRANSISTORS - CUTOFF FREQUENCY AND POWER
IVANOV, PA
TSARENKOV, BV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (11): : 1152 - 1157
[3] Stability Considerations for Silicon Carbide Field-Effect Transistors
Lemmon, Andrew
Mazzola, Michael
Gafford, James
Parker, Chris
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2013, 28 (10) : 4453 - 4459
[4] High-voltage operation of field-effect transistors in silicon carbide
Konstantinov, AO
Ivanov, PA
Nordell, N
Karlsson, S
Harris, CI
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (11) : 521 - 522
[5] High-voltage operation of field-effect transistors in silicon carbide
ABB Corporate Research, Stockholm, Sweden
IEEE Electron Device Lett, 11 (521-522):
[6] SILICON FIELD-EFFECT TRANSISTORS
CULLIS, R
ELECTRONIC ENGINEERING, 1965, 37 (451): : 606 - &
[7] Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)
Bargiel, Kamil
Bisewski, Damian
Zarebski, Janusz
ENERGIES, 2020, 13 (01)
[8] Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon
Pradeepkumar, A.
Cheng, H. H.
Liu, K. Y.
Gebert, M.
Bhattacharyya, S.
Fuhrer, M. S.
Iacopi, F.
JOURNAL OF APPLIED PHYSICS, 2023, 133 (17)
[9] FIELD-EFFECT MEASUREMENTS ON SILICON CARBIDE
BOSE, DN
PHYSICA STATUS SOLIDI, 1967, 24 (02): : K165 - &
[10] Silicon carbide junction field effect transistors
SiCED Electronics Development GmbH and Co. KG, Siemens Company, Günther-Scharowsky-Str.1, D-91052 Erlangen
Int. J. High Speed Electron. Syst., 2006, 3 (825-854):

← 1 2 3 4 5 →