Growth and etching studies of MgO-doped LiNbO3 single crystal

被引：0
|
作者：
Li, Xinhua [1 ]
Xu, Jiayue [1 ]
Jin, Min [1 ]
Shen, Hui [1 ]
Lu, Baoliang [1 ]
Wang, Zhanyong [1 ]
机构：
[1] Shanghai Inst Technol, Sch Mat Sci & Engn, Shanghai 200235, Peoples R China
来源：
OPTOELECTRONIC MATERIALS, PTS 1AND 2 | 2010年 / 663-665卷
关键词：
LiNbO(3) single crystal; Bridgman growth method; Etching; Microdomains; FERROELECTRIC MICRODOMAINS; BRIDGMAN METHOD; LITAO3;
D O I：
10.4028/www.scientific.net/MSF.663-665.1133
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
LiNbO(3) (Mg:LN) crystal is an important electro-optical material and MgO-doped LiNbO(3) was expected to improve its optical damage resistance. In the present work, we reported the Bridgman growth of MgO-doped LiNbO(3) crystal. The growth parameters were discussed and the defects were investigated by the chemical etching method. The etch hillocks and etch pits were observed on the negative Z surface while only etch pits on the positive Z surface by the optical microscope and EPMA. The etching morphology was discussed considering the domain structure.
引用
收藏
页码：1133 / 1136
页数：4
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