Growth and etching studies of MgO-doped LiNbO3 single crystal

被引：0

作者：

Li, Xinhua ^{[1
]}

Xu, Jiayue ^{[1
]}

Jin, Min ^{[1
]}

Shen, Hui ^{[1
]}

Lu, Baoliang ^{[1
]}

Wang, Zhanyong ^{[1
]}

机构：

[1] Shanghai Inst Technol, Sch Mat Sci & Engn, Shanghai 200235, Peoples R China

来源：

OPTOELECTRONIC MATERIALS, PTS 1AND 2 | 2010年 / 663-665卷

关键词：

LiNbO(3) single crystal; Bridgman growth method; Etching; Microdomains; FERROELECTRIC MICRODOMAINS; BRIDGMAN METHOD; LITAO3;

D O I：

10.4028/www.scientific.net/MSF.663-665.1133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LiNbO(3) (Mg:LN) crystal is an important electro-optical material and MgO-doped LiNbO(3) was expected to improve its optical damage resistance. In the present work, we reported the Bridgman growth of MgO-doped LiNbO(3) crystal. The growth parameters were discussed and the defects were investigated by the chemical etching method. The etch hillocks and etch pits were observed on the negative Z surface while only etch pits on the positive Z surface by the optical microscope and EPMA. The etching morphology was discussed considering the domain structure.

引用

页码：1133 / 1136

页数：4

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