MBE Growth and Optical Properties of III-V Nanowires on SiC/Si(111) Hybrid Substrate

被引：0

作者：

Reznik, R. R. ^{[1
,2
,3
,4
,7
]}

Kotlyar, K. P. ^{[1
,4
]}

Kukushkin, S. A. ^{[3
,6
]}

Osipov, A. V. ^{[3
,6
]}

Soshnikov, I. P. ^{[1
,4
,5
,7
]}

Nikitina, E. V. ^{[1
]}

Cirlin, G. E. ^{[1
,2
,3
,4
,5
]}

机构：

[1] St Petersburg Acad Univ, RAS, Nanotechnol Res & Educ Ctr, Khlopina 8-3, St Petersburg 194021, Russia

[2] Peter Great St Petersburg Polytech Univ, Polytechn Skaya 29, St- Petersburg 195251, Russia

[3] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia

[4] RAS, Inst Analyt Instrumentat, Rizhsky 26, St Petersburg 190103, Russia

[5] RAS, Ioffe Phys Tech Inst, Politekhn Skaya 26, St Petersburg 194021, Russia

[6] Russian Acad Sci, Inst Problems Mech Engn, Bolshoj 6, St Petersburg 199178, Russia

[7] Univ Durham, Dept Engn, Durham DH1 3LE, England

来源：

2018 INTERNATIONAL CONFERENCE LASER OPTICS (ICLO 2018) | 2018年

关键词：

nanowires; semiconductors; nanostructures; silicon; silicon carbide; molecular-beam epitaxy;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The fundamental possibility of MBE III-V nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting systems have been studied and compared with properties of such nanowires on silicon substrates.

引用

页码：382 / 382

页数：1

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