MBE Growth and Optical Properties of III-V Nanowires on SiC/Si(111) Hybrid Substrate

被引：0

作者：

Reznik, R. R. ^{[1
,2
,3
,4
,7
]}

Kotlyar, K. P. ^{[1
,4
]}

Kukushkin, S. A. ^{[3
,6
]}

Osipov, A. V. ^{[3
,6
]}

Soshnikov, I. P. ^{[1
,4
,5
,7
]}

Nikitina, E. V. ^{[1
]}

Cirlin, G. E. ^{[1
,2
,3
,4
,5
]}

机构：

[1] St Petersburg Acad Univ, RAS, Nanotechnol Res & Educ Ctr, Khlopina 8-3, St Petersburg 194021, Russia

[2] Peter Great St Petersburg Polytech Univ, Polytechn Skaya 29, St- Petersburg 195251, Russia

[3] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia

[4] RAS, Inst Analyt Instrumentat, Rizhsky 26, St Petersburg 190103, Russia

[5] RAS, Ioffe Phys Tech Inst, Politekhn Skaya 26, St Petersburg 194021, Russia

[6] Russian Acad Sci, Inst Problems Mech Engn, Bolshoj 6, St Petersburg 199178, Russia

[7] Univ Durham, Dept Engn, Durham DH1 3LE, England

来源：

2018 INTERNATIONAL CONFERENCE LASER OPTICS (ICLO 2018) | 2018年

关键词：

nanowires; semiconductors; nanostructures; silicon; silicon carbide; molecular-beam epitaxy;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The fundamental possibility of MBE III-V nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting systems have been studied and compared with properties of such nanowires on silicon substrates.

引用

页码：382 / 382

页数：1

共 50 条

[21] MBE GROWTH OF GAAS AND III-V QUANTUM-WELLS ON SI
WOODBRIDGE, K
HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 1 - 6
[22] Optical properties and characterization of SiC and III-V nitrides
Choyke, WJ
Devaty, RP
Clemen, LL
MacMillan, MF
Yoganathan, M
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 257 - 262
[23] Growth and optical properties of axial hybrid III–V/silicon nanowires
Moïra Hocevar
George Immink
Marcel Verheijen
Nika Akopian
Val Zwiller
Leo Kouwenhoven
Erik Bakkers
Nature Communications, 3
[24] Hybrid III-V/Silicon Nanowires
Hocevar, Moira
Conesa-Boj, Sonia
Bakkers, Erik
SEMICONDUCTOR NANOWIRES I: GROWTH AND THEORY, 2015, 93 : 231 - 248
[25] Structural properties of (111)B-oriented III-V nanowires
Johansson, J
Karlsson, LS
Svensson, CPT
Martensson, T
Wacaser, BA
Deppert, K
Samuelson, L
Seifert, W
NATURE MATERIALS, 2006, 5 (07) : 574 - 580
[26] Catalyst free MBE-VLS growth of GaAs nanowires on (111)Si substrate
Paek, J. H.
Nishiwaki, T.
Yamaguchi, M.
Sawaki, N.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6, 2009, 6 (06): : 1436 - 1440
[27] MBE growth and doping of III-V nitrides
Ng, HM
Doppalapudi, D
Korakakis, D
Singh, R
Moustakas, TD
JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 349 - 353
[28] III-V MBE GROWTH SYSTEMS.
Davies, Graham
Williams, David
1985, : 15 - 46
[29] Efficient III-V/Si Hybrid SOAs for Optical Interconnects
Cheung, S.
Shang, K.
Kawakita, Y.
Ben Yoo, S. J.
2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2015,
[30] The Use of SiC/Si Hybrid Substrate for MBE Growth of Thick GaN Layers
Reznik, R.
Soshnikov, I
Kukushkin, S.
Osipov, A.
Talalaev, V
Cirlin, G.
STATE-OF-THE ART TRENDS OF SCIENTIFIC RESEARCH OF ARTIFICIAL AND NATURAL NANOOBJECTS (STRANN-2018), 2019, 2064

← 1 2 3 4 5 →