Extreme scaling with ultra-thin Si channel MOSFETs

被引：0

作者：

Doris, B ^{[1
]}

Ieong, M ^{[1
]}

Kanarsky, T ^{[1
]}

Zhang, Y ^{[1
]}

Roy, RA ^{[1
]}

Dokumaci, O ^{[1
]}

Ren, ZB ^{[1
]}

Jamin, FF ^{[1
]}

Shi, L ^{[1
]}

Natzle, W ^{[1
]}

Huang, HJ ^{[1
]}

Mezzapelle, J ^{[1
]}

Mocuta, T ^{[1
]}

Womack, S ^{[1
]}

Gribelyuk, M ^{[1
]}

Jones, TC ^{[1
]}

Miller, RJ ^{[1
]}

Wong, HSP ^{[1
]}

Haensch, W ^{[1
]}

机构：

[1] IBM Corp, SRDC, Microelect Div, Hopewell Jct, NY 12533 USA

来源：

INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST | 2002年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We examine the scaling limits for planar single gate technology using the ultra-thin Si channel MOSFET. Characteristics for extreme scaled. devices with physical gate lengths down to 6nm and SOI channels as thin as 4nm are presented. For the first time, we report ring oscillators with 26nm gate lengths and ultra-thin Si channels.

引用

页码：267 / 270

页数：4

共 50 条

[1] RF Behavior of Undoped Channel Ultra-Thin Body with Ultra-thin BOX MOSFETs
Arshad, M. K. Md
Emam, M.
Kilchystka, V.
Andrieu, F.
Flandre, D.
Raskin, J. -P.
2012 IEEE 12TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2012, : 105 - 108
[2] Localized Ultra-Thin GeOI: an innovative approach to Germanium channel MOSFETs on Bulk Si substrates
Batail, E.
Monfray, S.
Tabone, C.
Kermarrec, O.
Damlencourt, J. F.
Gautier, P.
Rabille, G.
Arvet, C.
Loubet, N.
Campidelli, Y.
Hartmann, J. M.
Pouydebasque, A.
Delaye, V.
Le Royer, C.
Ghibaudo, G.
Skotnicki, T.
Deleonibus, S.
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, : 397 - +
[3] Electron mobility and magneto transport study of ultra-thin channel double-gate Si MOSFETs
Prunnila, M
Ahopelto, J
Gamiz, F
SOLID-STATE ELECTRONICS, 2005, 49 (09) : 1516 - 1521
[4] VDD scaling of ultra-thin InAs MOSFETs: A full-quantum study
Grillet, C.
Pala, M.
2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016), 2016, : 108 - 111
[5] RELIABILITY OF ULTRA-THIN SOI MOSFETS
TSUCHIYA, T
MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) : 371 - 378
[6] Multiphysics Modeling and Simulation of Ultra-thin Channel Germanium on Insulator (GeOI) MOSFETs
Chen, Wenchao
Wang, Manxi
Yin, Wen-Yan
Li, Erping
2017 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS), 2017,
[7] Transport study of ultra-thin SOI MOSFETs
Naser, B
Cho, KH
Hwang, SW
Bird, JP
Ferry, DK
Goodnick, SM
Park, BG
Ahn, D
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2): : 39 - 43
[8] Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs
Rim, K
Chan, K
Shi, L
Boyd, D
Ott, J
Klymko, N
Cardone, F
Tai, L
Koester, S
Cobb, M
Canaperi, D
To, B
Duch, E
Babich, I
Carruthers, R
Saunders, P
Walker, G
Zhang, Y
Steen, M
Ieong, M
2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 49 - 52
[9] Ultra-Thin Si Directly on Insulator (SDOI) MOSFETs at 20 nm gate length
Mohapatra, S. K.
Pradhan, K. P.
Sahu, P. K.
Singh, D.
Panda, S.
2014 INTERNATIONAL CONFERENCE ON HIGH PERFORMANCE COMPUTING AND APPLICATIONS (ICHPCA), 2014,
[10] Antenna protection strategy for ultra-thin gate MOSFETs
Krishnan, S
Amerasekera, A
1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, : 302 - 306

← 1 2 3 4 5 →