Spin- and valley-related tunneling time of massive Dirac electrons in a ferromagnetic MoS2 quantum structure

被引：3

作者：

Yuan, R. Y. ^{[1
]}

Jin, J. J. ^{[1
]}

Hao, X. J. ^{[1
]}

Li, C. L. ^{[2
]}

Guo, Y. ^{[3
,4
,5
]}

机构：

[1] Capital Normal Univ, Dept Phys, Ctr Theoret Phys, Beijing 100048, Peoples R China

[2] Capital Normal Univ, Coll Elementary Educ, Lab Microsized Funct Mat, Beijing 100048, Peoples R China

[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

[4] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

[5] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2020年 / 120卷

关键词：

52;

D O I：

10.1016/j.physe.2020.114103

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate the tunneling time of massive Dirac electrons through an electric barrier in a ferromagnetic quantum structure consisting of normal/ferromagnetic/normal MoS2 parts. The results show that the dwell time is not only spin-separated but also valley-separated due to the spin-valley coupling of valence-band edges together with the exchange field. When the electric barrier broadens, the spin-dependent and valley-dependent dwell times increase with oscillating behavior. These behaviors are different from the massless Dirac electrons in graphene. Moreover, both the spin- and valley-dependent dwell times can be effectively modulated by the angle of incidence, the width, and the height of the electric barrier.

引用

页数：6