Spin- and valley-related tunneling time of massive Dirac electrons in a ferromagnetic MoS2 quantum structure

被引：3
|
作者：
Yuan, R. Y. [1 ]
Jin, J. J. [1 ]
Hao, X. J. [1 ]
Li, C. L. [2 ]
Guo, Y. [3 ,4 ,5 ]
机构：
[1] Capital Normal Univ, Dept Phys, Ctr Theoret Phys, Beijing 100048, Peoples R China
[2] Capital Normal Univ, Coll Elementary Educ, Lab Microsized Funct Mat, Beijing 100048, Peoples R China
[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[4] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[5] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2020年 / 120卷
关键词：
52;
D O I：
10.1016/j.physe.2020.114103
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate the tunneling time of massive Dirac electrons through an electric barrier in a ferromagnetic quantum structure consisting of normal/ferromagnetic/normal MoS2 parts. The results show that the dwell time is not only spin-separated but also valley-separated due to the spin-valley coupling of valence-band edges together with the exchange field. When the electric barrier broadens, the spin-dependent and valley-dependent dwell times increase with oscillating behavior. These behaviors are different from the massless Dirac electrons in graphene. Moreover, both the spin- and valley-dependent dwell times can be effectively modulated by the angle of incidence, the width, and the height of the electric barrier.
引用
收藏
页数：6
相关论文
共 31 条
  • [21] Gate-Voltage-Controlled Spin and Valley Polarization Transport in a Normal/Ferromagnetic/Normal MoS2 Junction
    Li, Hai
    Shao, Jianmei
    Yao, Daoxin
    Yang, Guowei
    ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (03) : 1759 - 1764
  • [22] Versatile device structures in MoS2: magnetic switching of perfect spin and valley polarization states as well as tunneling magnetoresistance
    Rojas-Briseno, J. G.
    Villasana-Mercado, P.
    Molina-Valdovinos, S.
    Rodriguez-Vargas, I
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2025, 58 (16)
  • [23] The Effective Mass of Dirac Fermions and Spin-Dependent Thermodynamic Properties of Monolayer Ferromagnetic MoS2 in the Presence of Rashba Spin-Orbit Coupling
    Bui Dinh Hoi
    Kavoos Mirabbaszadeh
    Mohsen Yarmohammadi
    Journal of Superconductivity and Novel Magnetism, 2017, 30 : 3137 - 3141
  • [24] The Effective Mass of Dirac Fermions and Spin-Dependent Thermodynamic Properties of Monolayer Ferromagnetic MoS2 in the Presence of Rashba Spin-Orbit Coupling
    Bui Dinh Hoi
    Mirabbaszadeh, Kavoos
    Yarmohammadi, Mohsen
    JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2017, 30 (11) : 3137 - 3141
  • [25] Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an Isolated MoS2 Trilayer
    Li, Xiao
    Zhang, Fan
    Niu, Qian
    PHYSICAL REVIEW LETTERS, 2013, 110 (06)
  • [26] Spin-valley-dependent transport in a monolayer MoS2 under strain and time-oscillating potential
    Sattari, Farhad
    Mirershadi, Soghra
    PHYSICA B-CONDENSED MATTER, 2023, 662
  • [27] Valley- and spin-polarized oscillatory magneto-optical absorption in monolayer MoS2 quantum rings
    Oliveira, D.
    Villegas-Lelovsky, L.
    Soler, M. A. G.
    Qu, Fanyao
    PHYSICAL REVIEW B, 2018, 97 (12)
  • [28] Electronic structure and spin/valley transport properties of monolayer MoS2 under the irradiation of the off-resonant circularly polarized light
    Zhang Xin-Cheng
    Liao Wen-Hu
    Zuo Min
    ACTA PHYSICA SINICA, 2018, 67 (10)
  • [29] Thickness dependence of spin polarization and electronic structure of ultra-thin films of MoS2 and related transition-metal dichalcogenides
    Tay-Rong Chang
    Hsin Lin
    Horng-Tay Jeng
    A. Bansil
    Scientific Reports, 4
  • [30] Thickness dependence of spin polarization and electronic structure of ultra-thin films of MoS2 and related transition-metal dichalcogenides
    Chang, Tay-Rong
    Lin, Hsin
    Jeng, Horng-Tay
    Bansil, A.
    SCIENTIFIC REPORTS, 2014, 4
1234