Spin- and valley-related tunneling time of massive Dirac electrons in a ferromagnetic MoS2 quantum structure

被引：3
|
作者：
Yuan, R. Y. [1 ]
Jin, J. J. [1 ]
Hao, X. J. [1 ]
Li, C. L. [2 ]
Guo, Y. [3 ,4 ,5 ]
机构：
[1] Capital Normal Univ, Dept Phys, Ctr Theoret Phys, Beijing 100048, Peoples R China
[2] Capital Normal Univ, Coll Elementary Educ, Lab Microsized Funct Mat, Beijing 100048, Peoples R China
[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[4] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[5] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2020年 / 120卷
关键词：
52;
D O I：
10.1016/j.physe.2020.114103
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate the tunneling time of massive Dirac electrons through an electric barrier in a ferromagnetic quantum structure consisting of normal/ferromagnetic/normal MoS2 parts. The results show that the dwell time is not only spin-separated but also valley-separated due to the spin-valley coupling of valence-band edges together with the exchange field. When the electric barrier broadens, the spin-dependent and valley-dependent dwell times increase with oscillating behavior. These behaviors are different from the massless Dirac electrons in graphene. Moreover, both the spin- and valley-dependent dwell times can be effectively modulated by the angle of incidence, the width, and the height of the electric barrier.
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页数：6
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