Preparation of β-FeSi2 substrates by molten salt method

被引：13
|
作者：
Okubo, M.
Ohishi, T.
Mishina, A.
Yamauchi, I.
Udono, H.
Suemasu, T.
Matsuyama, T.
Tatsuoka, H.
机构：
[1] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan
[2] Osaka Univ, Sch Engn, Dept Mat Sci & Engn, Suita, Osaka 5650871, Japan
[3] Ibaraki Univ, Fac Engn, Dept Elect & Elect Engn, Hitachi, Ibaraki 3168511, Japan
[4] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[5] Pulstec Ind Co Ltd, Hamamatsu, Shizuoka 4311304, Japan
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 22期
关键词：
beta-FeSi2; molten salt method; crystal growth; semiconducting property;
D O I：
10.1016/j.tsf.2007.02.067
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Large-sized beta-FeSi2 substrates were successfully prepared for the first time from the silicide bulk crystal grown by the molten salt method. The structural, electrical and optical properties of the as-grown beta-FeSi2 bulk crystals were also investigated. The crystal is single phase beta-FeSi2, and polycrystalline with no preferable growth crystallographic orientations. It was also determined that the beta-FeSi2 shows a p-type conduction, and the hole concentration and the Hall mobility at room temperature were about 10(17) cm(-3) and 10 cm(2)-Vs, respectively. In addition, the PL emission around 0.8 eV was realized from the beta-FeSi2 bulk crystal. This simple vacuum-free growth technique of beta-FeSi2 and the large-sized substrate preparation procedure encourage us to develop future silicide-based electronics. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：8268 / 8271
页数：4
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