Preparation of β-FeSi2 substrates by molten salt method

被引：13

作者：

Okubo, M.

Ohishi, T.

Mishina, A.

Yamauchi, I.

Udono, H.

Suemasu, T.

Matsuyama, T.

Tatsuoka, H.

机构：

[1] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan

[2] Osaka Univ, Sch Engn, Dept Mat Sci & Engn, Suita, Osaka 5650871, Japan

[3] Ibaraki Univ, Fac Engn, Dept Elect & Elect Engn, Hitachi, Ibaraki 3168511, Japan

[4] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[5] Pulstec Ind Co Ltd, Hamamatsu, Shizuoka 4311304, Japan

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 22期

关键词：

beta-FeSi2; molten salt method; crystal growth; semiconducting property;

D O I：

10.1016/j.tsf.2007.02.067

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Large-sized beta-FeSi2 substrates were successfully prepared for the first time from the silicide bulk crystal grown by the molten salt method. The structural, electrical and optical properties of the as-grown beta-FeSi2 bulk crystals were also investigated. The crystal is single phase beta-FeSi2, and polycrystalline with no preferable growth crystallographic orientations. It was also determined that the beta-FeSi2 shows a p-type conduction, and the hole concentration and the Hall mobility at room temperature were about 10(17) cm(-3) and 10 cm(2)-Vs, respectively. In addition, the PL emission around 0.8 eV was realized from the beta-FeSi2 bulk crystal. This simple vacuum-free growth technique of beta-FeSi2 and the large-sized substrate preparation procedure encourage us to develop future silicide-based electronics. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8268 / 8271

页数：4

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