Metalorganic chemical vapor deposition of β-FeSi2 on β-FeSi2 seed crystals formed on Si substrates

被引：1
|
作者：
Suzuno, Mitsushi [1 ]
Akutsu, Keiichi [1 ]
Kawakami, Hideki [1 ]
Akiyama, Kensuke [2 ]
Suemasu, Takashi [1 ]
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] Kanagawa Ind Technol Ctr, Ebina, Kanagawa 2430435, Japan
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 24期
关键词：
beta-FeSi2; MBE; MOCVD; Photoresponse; EBSD; GROWTH; FILMS; SI(111); PHOTOLUMINESCENCE;
D O I：
10.1016/j.tsf.2011.05.029
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have fabricated a beta-FeSi2 film by metalorganic chemical vapor deposition on a Si(001) substrate with beta-FeSi2 seed crystals grown by molecular beam epitaxy, and investigated the crystallinity, surface morphology and temperature dependence of photoresponse properties of the beta-FeSi2 film. The surface of the grown beta-FeSi2 film was atomically flat, and step-and-terrace structure was clearly observed. Multi-domain structure of beta-FeSi2 whose average size was approximately 200 nm however was revealed. The photoresponse was obtained in an infrared light region (similar to 0.95 eV) at temperatures below 200 K. The external quantum efficiency reached a maximum, being as large as 25% at 100 K when a bias voltage was 2.0 V. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码：8473 / 8476
页数：4
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