Frequency conversion in travelling wave semiconductor laser amplifiers with bulk and quantum well structures

被引:1
|
作者
Bava, GP [1 ]
Debernardi, P [1 ]
Osella, G [1 ]
机构
[1] POLITECN TORINO, CNR, CESPA, I-10129 TURIN, ITALY
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 1996年 / 143卷 / 02期
关键词
frequency conversion; travelling waves; semiconductor laser amplifiers; quantum well structures;
D O I
10.1049/ip-opt:19960080
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A microscopic model of four-wave mixing in semiconductor materials is applied to the analysis of bulk and multiple quantum well travelling wave amplifiers. The nonlinear optical response includes, in the framework of the density matrix formalism, the main four-wave mixing processes for frequency detuning of the input optical fields up to the THz region. A typical pump and probe configuration is considered, where a strong pump at angular frequency omega(pump) with a weaker probe omega(probe) is injected at the input; at the output a new signal appears with omega(signal) = 2 omega(probe) - omega(probe). Particular emphasis is given to the comparison and the optimisation of frequency conversion in bulk and quantum well amplifiers. In optimised devices, the numerical results show good conversion performances in the two kinds of structures, even if quantum well amplifiers give higher conversion gains.
引用
收藏
页码:119 / 125
页数:7
相关论文
共 50 条
  • [41] NOISE IN SEMICONDUCTOR-LASER AMPLIFIERS WITH QUANTUM BOX STRUCTURE
    KOMORI, K
    ARAI, S
    SUEMATSU, Y
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (01) : 39 - 41
  • [42] Terahertz radiation from bulk and quantum semiconductor structures
    Kadoya, Y
    Hirakawa, K
    TERAHERTZ OPTOELECTRONICS, 2005, 97 : 117 - 156
  • [43] A novel transmission line model for quantum well semiconductor optical amplifiers
    Mingjun Xia
    H. Ghafouri-Shiraz
    Optical and Quantum Electronics, 2016, 48
  • [44] ASYMMETRIC FREQUENCY-RESPONSE OF SEMICONDUCTOR-LASER AMPLIFIERS
    NAKAI, T
    ITO, R
    OGASAWARA, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11): : L680 - L682
  • [45] Polarization-insensitive quantum-well semiconductor optical amplifiers
    Koonath, P
    Kim, S
    Cho, WJ
    Gopinath, A
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (09) : 1282 - 1290
  • [46] Local Carrier Recovery Acceleration in Quantum Well Semiconductor Optical Amplifiers
    Huang, Xi
    Qin, Cui
    Huang, Dexiu
    Zhang, Xinliang
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (10) : 1407 - 1413
  • [47] Gain and phase dynamics in strained quantum well semiconductor optical amplifiers
    Qin, Cui
    Zhang, Xinliang
    INFORMATION OPTICS AND OPTICAL DATA STORAGE II, 2012, 8559
  • [48] A novel transmission line model for quantum well semiconductor optical amplifiers
    Xia, Mingjun
    Ghafouri-Shiraz, H.
    OPTICAL AND QUANTUM ELECTRONICS, 2016, 48 (01) : 1 - 14
  • [49] Excitonic quantum beats in semiconductor quantum-well structures
    Koch, M
    vonPlessen, G
    Feldmann, J
    Gobel, EO
    CHEMICAL PHYSICS, 1996, 210 (1-2) : 367 - 388
  • [50] Quantum Dot Versus Quantum Well Semiconductor Optical Amplifiers for Subpicosecond Pulse Amplification
    J. Molina Vázquez
    J.-Z. Zhang
    I. Galbraith
    Optical and Quantum Electronics, 2004, 36 : 539 - 549