Frequency conversion in travelling wave semiconductor laser amplifiers with bulk and quantum well structures

被引:1
|
作者
Bava, GP [1 ]
Debernardi, P [1 ]
Osella, G [1 ]
机构
[1] POLITECN TORINO, CNR, CESPA, I-10129 TURIN, ITALY
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 1996年 / 143卷 / 02期
关键词
frequency conversion; travelling waves; semiconductor laser amplifiers; quantum well structures;
D O I
10.1049/ip-opt:19960080
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A microscopic model of four-wave mixing in semiconductor materials is applied to the analysis of bulk and multiple quantum well travelling wave amplifiers. The nonlinear optical response includes, in the framework of the density matrix formalism, the main four-wave mixing processes for frequency detuning of the input optical fields up to the THz region. A typical pump and probe configuration is considered, where a strong pump at angular frequency omega(pump) with a weaker probe omega(probe) is injected at the input; at the output a new signal appears with omega(signal) = 2 omega(probe) - omega(probe). Particular emphasis is given to the comparison and the optimisation of frequency conversion in bulk and quantum well amplifiers. In optimised devices, the numerical results show good conversion performances in the two kinds of structures, even if quantum well amplifiers give higher conversion gains.
引用
收藏
页码:119 / 125
页数:7
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