Effective interfaces in silicon heterojunction solar cells

被引：35
|
作者：
Wang, TH [1 ]
Iwaniczko, E [1 ]
Page, MR [1 ]
Levi, DH [1 ]
Yan, Y [1 ]
Yelundur, V [1 ]
Branz, HM [1 ]
Rohatgi, A [1 ]
Wang, Q [1 ]
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年
关键词：
D O I：
10.1109/PVSC.2005.1488290
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9% with a high V., of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n) emitters and screen-printed Al-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.
引用
收藏
页码：955 / 958
页数：4
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