Effective interfaces in silicon heterojunction solar cells

被引：35

作者：

Wang, TH ^{[1
]}

Iwaniczko, E ^{[1
]}

Page, MR ^{[1
]}

Levi, DH ^{[1
]}

Yan, Y ^{[1
]}

Yelundur, V ^{[1
]}

Branz, HM ^{[1
]}

Rohatgi, A ^{[1
]}

Wang, Q ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488290

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9% with a high V., of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n) emitters and screen-printed Al-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.

引用

页码：955 / 958

页数：4

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