Long room-temperature electron spin lifetimes in highly doped cubic GaN

被引：23
|
作者：
Buss, J. H. [1 ]
Rudolph, J. [1 ]
Schupp, T. [2 ]
As, D. J. [2 ]
Lischka, K. [2 ]
Haegele, D. [1 ]
机构：
[1] Ruhr Univ Bochum, Arbeitsgrp Spektroskopie Kondensierten Mat, D-44780 Bochum, Germany
[2] Univ Gesamthsch Paderborn, Dept Phys, D-33095 Paderborn, Germany
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 06期
关键词：
electron relaxation time; gallium compounds; III-V semiconductors; magnetoelectronics; semiconductor doping; wide band gap semiconductors;
D O I：
10.1063/1.3478838
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on very long electron spin relaxation times in highly n-doped bulk zincblende GaN exceeding 500 ps up to room-temperature. Time-resolved Kerr-rotation measurements show an almost temperature independent spin relaxation time between 80 and 295 K confirming an early prediction of Dyakonov and Perel for a degenerate electron gas. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478838]
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页数：3
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