Long room-temperature electron spin lifetimes in highly doped cubic GaN

被引：23

作者：

Buss, J. H. ^{[1
]}

Rudolph, J. ^{[1
]}

Schupp, T. ^{[2
]}

As, D. J. ^{[2
]}

Lischka, K. ^{[2
]}

Haegele, D. ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Arbeitsgrp Spektroskopie Kondensierten Mat, D-44780 Bochum, Germany

[2] Univ Gesamthsch Paderborn, Dept Phys, D-33095 Paderborn, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 06期

关键词：

electron relaxation time; gallium compounds; III-V semiconductors; magnetoelectronics; semiconductor doping; wide band gap semiconductors;

D O I：

10.1063/1.3478838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on very long electron spin relaxation times in highly n-doped bulk zincblende GaN exceeding 500 ps up to room-temperature. Time-resolved Kerr-rotation measurements show an almost temperature independent spin relaxation time between 80 and 295 K confirming an early prediction of Dyakonov and Perel for a degenerate electron gas. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478838]

引用

页数：3

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