Nonparabolic conduction subbands in InGaAs/InAlAs multi-quantum wells with photocurrent and transmission measurement

被引：0
|
作者：
Tanaka, K [1 ]
Ueki, Y [1 ]
Shibata, K [1 ]
Kotera, N [1 ]
Washima, M [1 ]
Nakamura, H [1 ]
Mishima, T [1 ]
机构：
[1] Hiroshima City Univ, Dept Comp Engn, Hiroshima 7313194, Japan
来源：
2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ICIPRM.2001.929126
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical interband transitions of p-i-n and modulation-doped In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells structures were clearly observed in photocurrent and transmission spetra. Steps of the transitions coincided between both spectra. Effective masses of conduction subbands were estimated in fitting the transition energies to an effective mass equation. The masses of modulation-doped multi-quantum wells agreed with undoped multi-quantum wells in p-i-n junctions. In normal to the quantum well plane, the effective mass was more 75%-heavier than the bulk bandedge mass of InGaAs at a top of the quantum wells.
引用
收藏
页码：334 / 337
页数：4
相关论文
共 50 条
  • [41] InGaAs/InAlAs Double Quantum Wells as Starting Structures for Quantum Logic Gates
    Marchewka, M.
    Sheregii, E. M.
    15TH INTERNATIONAL CONFERENCE ON NARROW GAP SYSTEMS (NGS15), 2011, 1416 : 174 - 177
  • [42] Characterization of GaAs/InGaAs quantum wells using photocurrent spectroscopy
    Barnes, J
    Nelson, J
    Barnham, KWJ
    Roberts, JS
    Pate, MA
    Grey, R
    Dosanjh, SS
    Mazzer, M
    Ghiraldo, F
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) : 7775 - 7779
  • [43] Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells
    Torchynska, TV
    Espinola, JLC
    Eliseev, PG
    Stintz, A
    Malloy, KJ
    Sierra, RP
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 195 (01): : 209 - 213
  • [44] Composition fluctuations in GaInNAs multi-quantum wells
    Herrera, M
    González, D
    García, R
    Hopkinson, M
    Navaretti, P
    Gutiérrez, M
    Liu, HY
    IEE PROCEEDINGS-OPTOELECTRONICS, 2004, 151 (05): : 271 - 274
  • [45] Electron spin relaxation time in (110) InGaAs/InAlAs quantum wells
    Yokota, Nobuhide
    Yasuda, Yusuke
    Ikeda, Kazuhiro
    Kawaguchi, Hitoshi
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (02)
  • [46] Enhanced Hot-Carrier Effects in InAlAs/InGaAs Quantum Wells
    Hirst, Louise C.
    Yakes, Michael K.
    Bailey, Christopher G.
    Tischler, Joseph G.
    Lumb, Matthew P.
    Gonzalez, Maria
    Fuehrer, Markus F.
    Ekins-Daukes, N. J.
    Walters, Robert J.
    IEEE JOURNAL OF PHOTOVOLTAICS, 2014, 4 (06): : 1526 - 1531
  • [47] InGaAs/InAlAs quantum wells on wafer bonded InP/GaAs substrates
    Hayashi, S
    Sandhu, R
    Chen, G
    Hicks, R
    Goorsky, MS
    2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 389 - 391
  • [48] Optimization of InGaAs/InAlAs strained multiple quantum wells for amplitude modulators
    Pires, MP
    Tribuzy, CVB
    Yavich, B
    Souza, PL
    10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, 2003, 5023 : 323 - 326
  • [49] NONLINEAR-OPTICAL ABSORPTION IN INGAAS/INALAS MULTIPLE QUANTUM WELLS
    MACE, DAH
    FISHER, MA
    BURT, MG
    SCOTT, EG
    ADAMS, MJ
    OPTICS LETTERS, 1990, 15 (03) : 189 - 191
  • [50] Crystal growth of InGaAs/InAlAs quantum wells on InP(110) by MBE
    Yasuda, Yusuke
    Koh, Shinji
    Ikeda, Kazuhiro
    Kawaguchi, Hitoshi
    JOURNAL OF CRYSTAL GROWTH, 2013, 364 : 95 - 100
12345