Nonparabolic conduction subbands in InGaAs/InAlAs multi-quantum wells with photocurrent and transmission measurement

被引：0
|
作者：
Tanaka, K [1 ]
Ueki, Y [1 ]
Shibata, K [1 ]
Kotera, N [1 ]
Washima, M [1 ]
Nakamura, H [1 ]
Mishima, T [1 ]
机构：
[1] Hiroshima City Univ, Dept Comp Engn, Hiroshima 7313194, Japan
来源：
2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ICIPRM.2001.929126
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical interband transitions of p-i-n and modulation-doped In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells structures were clearly observed in photocurrent and transmission spetra. Steps of the transitions coincided between both spectra. Effective masses of conduction subbands were estimated in fitting the transition energies to an effective mass equation. The masses of modulation-doped multi-quantum wells agreed with undoped multi-quantum wells in p-i-n junctions. In normal to the quantum well plane, the effective mass was more 75%-heavier than the bulk bandedge mass of InGaAs at a top of the quantum wells.
引用
收藏
页码：334 / 337
页数：4
相关论文
共 50 条
  • [21] Thickness evaluation of InGaAs/InAlAs quantum wells
    Kotera, N.
    Tanaka, K.
    Nakamura, H.
    Washima, M.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (03)
  • [22] Estimation of effective mass and subbands in multi-quantum wells using polarized light irradiation
    Tanaka, K.
    Happo, N.
    Fujiwara, M.
    Kotera, N.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5, 2013, 10 (05): : 727 - 731
  • [23] PHOTOCURRENT SPECTROSCOPY OF 2-DIMENSIONAL EXCITONS IN 5-NM WIDE INGAAS/INALAS MULTI-QUANTUM-WELLS
    KOTERA, N
    TANAKA, K
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 233 - 236
  • [24] Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells
    G. H. Yu
    X. W. Fan
    Z. P. Guan
    J. Y. Zhang
    X. W. Zhao
    D. Z. Shen
    Z. H. Zheng
    B. J. Yang
    D. S. Jiang
    Y. B. Chen
    Z. M. Zhu
    Journal of Electronic Materials, 1999, 28 : 563 - 566
  • [25] Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells
    Yu, GH
    Fan, XW
    Guan, ZP
    Zhang, JY
    Zhao, XW
    Shen, DZ
    Zheng, ZH
    Yang, BJ
    Jiang, DS
    Chen, YB
    Zhu, ZM
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (05) : 563 - 566
  • [26] Hot-electron noise in InAlAs/InGaAs/InAlAs quantum wells
    Aninkevicius, V
    Liberis, J
    Matulioniene, I
    Matulionis, A
    Sakalas, P
    Henle, B
    Kohn, E
    Berntgen, J
    NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 71 - 74
  • [27] Wavy growth onset in strain-balanced InGaAs multi-quantum wells
    Nasi, L
    Ferrari, C
    Lanzi, A
    Lazzarini, L
    Balboni, R
    Clarke, G
    Mazzer, M
    Rohr, C
    Abbott, P
    Barnham, KWJ
    JOURNAL OF CRYSTAL GROWTH, 2005, 274 (1-2) : 65 - 72
  • [28] Conduction band mass determinations for N-type InGaAs/InAlAs single quantum wells
    Jones, ED
    Kotera, N
    Reno, JL
    Wang, JJ
    OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 : 146 - 150
  • [29] Experimental Luttinger parameter determination by confined states in InGaAs/InAlAs multi-quantum well structures
    Tanaka, K
    Kotera, N
    Nakamura, H
    OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 : 338 - 345
  • [30] Nonparabolic valence subband in In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells using transmission Spectroscopy
    Tanaka, K.
    Kotera, N.
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 91 - 94
12345