Structural Properties of GaN Nanowires and GaN/AlN Insertions Grown by Molecular Beam Epitaxy

被引：2

作者：

Bougerol, C. ^{[1
,2
]}

Songmuang, R. ^{[1
,2
]}

Camacho, D. ^{[3
]}

Niquet, Y. M. ^{[3
]}

Daudin, B. ^{[1
,2
]}

机构：

[1] Inst Neel CNRS UJF, CEA CNRS Grp Nanophys & Semicond, 17 Rue Martyrs, F-38054 Grenoble, France

[2] CEA Grenoble, INAC, SP2M, F-38054 Grenoble, France

[3] CEA Grenoble, INAC, SP2M, L Sim, F-38054 Grenoble, France

来源：

16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS | 2010年 / 209卷

关键词：

D O I：

10.1088/1742-6596/209/1/012010

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The microstructure of GaN nanowires (NWs) at the Si(111) substrate interface and the strain state of GaN insertions in GaN/AlN nanowire heterostructures have been studied by high resolution transmission electron microscopy We have found that GaN NWs are relaxed from the beginning of the growth, due to a plastic relaxation mechanism Concerning the GaN insertions in AlN, the presence of dislocations in the AlN capping layer can explain their partially relaxed state and the apparent discrepancies between experimental results and theoretical modelling

引用

页数：4

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