Structural Properties of GaN Nanowires and GaN/AlN Insertions Grown by Molecular Beam Epitaxy

被引：2

作者：

Bougerol, C. ^{[1
,2
]}

Songmuang, R. ^{[1
,2
]}

Camacho, D. ^{[3
]}

Niquet, Y. M. ^{[3
]}

Daudin, B. ^{[1
,2
]}

机构：

[1] Inst Neel CNRS UJF, CEA CNRS Grp Nanophys & Semicond, 17 Rue Martyrs, F-38054 Grenoble, France

[2] CEA Grenoble, INAC, SP2M, F-38054 Grenoble, France

[3] CEA Grenoble, INAC, SP2M, L Sim, F-38054 Grenoble, France

来源：

16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS | 2010年 / 209卷

关键词：

D O I：

10.1088/1742-6596/209/1/012010

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The microstructure of GaN nanowires (NWs) at the Si(111) substrate interface and the strain state of GaN insertions in GaN/AlN nanowire heterostructures have been studied by high resolution transmission electron microscopy We have found that GaN NWs are relaxed from the beginning of the growth, due to a plastic relaxation mechanism Concerning the GaN insertions in AlN, the presence of dislocations in the AlN capping layer can explain their partially relaxed state and the apparent discrepancies between experimental results and theoretical modelling

引用

页数：4

共 50 条

[31] Photoluminescence of GaN grown by molecular beam epitaxy on freestanding GaN template
Reshchikov, MA
Yun, F
Huang, D
He, L
Morkoc, H
Park, SS
Lee, KY
MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS, 2002, 722 : 27 - 32
[32] Ellipsometric study of GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy
Ajaz-un-Nabi, M.
Ashfaq, A.
Arshad, M. Imran
Ali, A.
Mahmood, K.
Hasan, M. A.
Asghar, M.
13TH INTERNATIONAL SYMPOSIUM ON ADVANCED MATERIALS (ISAM 2013), 2014, 60
[33] Dislocation density in AlN grown on multistacked GaN/AlN quantum dot layers by molecular beam epitaxy
Managaki, Nobuto
Iizuka, Norio
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S531 - S534
[34] Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Fernandez-Garrido, Sergio
Ramsteiner, Manfred
Gao, Guanhui
Galves, Lauren A.
Sharma, Bharat
Corfdir, Pierre
Calabrese, Gabriele
Schiaber, Ziani de Souza
Pfueller, Carsten
Trampert, Achim
Lopes, Joao Marcelo J.
Brandt, Oliver
Geelhaar, Lutz
NANO LETTERS, 2017, 17 (09) : 5213 - 5221
[35] Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)
Jing, Ho Xin
Abdullah, Che Azurahanim Che
Yusoff, Mohd Zaki Mohd
Mahyuddin, Azzafeerah
Hassan, Zainuriah
RESULTS IN PHYSICS, 2019, 12 : 1177 - 1181
[36] Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
Calleja, E
Sánchez-García, MA
Sánchez, FJ
Calle, F
Naranjo, FB
Muñoz, E
Jahn, U
Ploog, K
PHYSICAL REVIEW B, 2000, 62 (24) : 16826 - 16834
[37] Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy
Hamdani, F
Botchkarev, A
Kim, W
Morkoc, H
Yeadon, M
Gibson, JM
Tsen, SCY
Smith, DJ
Evans, K
Litton, CW
Mitchel, WC
Hemenger, P
APPLIED PHYSICS LETTERS, 1997, 70 (04) : 467 - 469
[38] Thermal properties of GaN/Si heterostructures grown by molecular beam epitaxy
Cervantes-Contreras, M
Quezada-Maya, CA
López-López, M
de la Cruz, GG
Tamura, M
Yodo, T
JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 415 - 420
[39] Correlations between structural, electrical and optical properties of GaN layers grown by molecular beam epitaxy
Kirchner, V
Fehrer, M
Figge, S
Heinke, H
Einfeldt, S
Hommel, D
Selke, H
Ryder, PL
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1999, 216 (01): : 659 - 662
[40] Structural and optical properties of InGaN-GaN nanowire heterostructures grown by molecular beam epitaxy
Limbach, F.
Gotschke, T.
Stoica, T.
Calarco, R.
Sutter, E.
Ciston, J.
Cusco, R.
Artus, L.
Kremling, S.
Hoefling, S.
Worschech, L.
Gruetzmacher, D.
JOURNAL OF APPLIED PHYSICS, 2011, 109 (01)

← 1 2 3 4 5 →