Ferromagnetic tunnel junctions with high MR and low resistance.-area product

被引：0

作者：

Liu, HR ^{[1
]}

Ren, TL ^{[1
]}

Qu, BJ ^{[1
]}

Ouyang, KQ ^{[1
]}

Fan, ZX ^{[1
]}

Liu, LT ^{[1
]}

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spin tunnel Junctions with junction area between 50 and 10(4) mu m(2) were fabricated. A,structure of glass/Ta 35 angstrom/NiFe 20 angstrom/IrMn 70 angstrom/CoFe 30 angstrom/Al2O3 15 angstrom/CoFe 50 angstrom/NiFe 45 angstrom/Ta 120 angstrom was used in the Junctions. The junctions have a max MR ratio of 26.17% and a low 2 resistance-area product of 1.22 k Omega center dot mu m(2). The effective barrier height is 1.04eV and the effective barrier thickness is 9.97 angstrom. The max tunneling magnetoresistance (TMR) values is obtained by an N-2 protecting anneal at 300 degrees C for 3 hours applying an external field of 3000 Oe. The as-deposited junctions show a peak-shape tunneling effect. And the peak-shape effect is weaker by increasing the temperature and the time of anneal. The ferromagnetic tunnel junctions with high MR and low resistance-area product are suitable for the applications of magnetic random access memory (MRAM) and magnetic read head.

引用

页码：769 / 772

页数：4

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