The effects of substrate temperature on ZnO-based resistive random access memory devices

被引：15
|
作者：
Zhao Jian-Wei [1 ]
Liu Feng-Juan [1 ]
Huang Hai-Qin [1 ]
Hu Zuo-Fu [1 ]
Zhang Xi-Qing [1 ]
机构：
[1] Beijing Jiaotong Univ, Key Lab Luminescence & Opt Informat, Minist Educ, Inst Optoelect Technol, Beijing 100044, Peoples R China
来源：
CHINESE PHYSICS B | 2012年 / 21卷 / 06期
基金：
中国国家自然科学基金;
关键词：
ZnO; resistive switching devices; magnetron sputtering; SWITCHING MEMORIES;
D O I：
10.1088/1674-1056/21/6/065201
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering. The ZnO thin films are grown at room temperature and 400 degrees C substrate temperature, respectively. By comparing the data, we find that the latter device displayed better stability in the repetitive switching cycle test, and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased. After 10(4)-s storage time measurement, this device exhibits a good retention property. Moreover, the operation voltages are very low: 0.3 V/-0.7 V (OFF state) and 0.3 V (ON state). A high-voltage forming process in the initial state is not required, and a multistep reset process is demonstrated.
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页数：4
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